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| Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK215-50Y QUICK REFERENCE DATA SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25C MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A C m APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL I S 3 12 45 B TOPFET HSS G L Fig. 2. Fig. 3. May 2001 1 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy 0.1, tp = 300 s IL = 10 A, VBG = 16 V Tj 150C prior to turn-off -5 -50 to limit input, status currents 3.2 during soldering Tmb 95C Tmb 25C CONDITIONS MIN. 0 -55 - BUK215-50Y MAX. 50 20 67 175 150 260 UNIT V A W C C C 16 32 V V - k 5 50 mA mA 150 mJ ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal resistance4 Rth j-mb Junction to mounting base 1.52 1.86 K/W CONDITIONS MIN. TYP. MAX. UNIT 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor. May 2001 2 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y STATIC CHARACTERISTICS Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL VBG VBL -VLG -VLG PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Negative load voltage1 Supply voltage VBG Operating range 2 BUK215-50Y CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 10 A; tp = 300 s battery to ground MIN. 50 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 UNIT V V V V 5.5 9 V VBG 16 V VLG = 0 V Tmb = 25C 4 - 35 V A A A A mA A IB IL IG IL Currents Quiescent current3 Off-state load current Operating current 5 6 9 0.1 0.1 2 - 20 2 20 1 4 - VBL = VBG Tmb = 25C IL = 0 A VBL = 0.5 V VBG 9 to 35 V 6V IL 10 A 10 A Tmb = 85C tp7 300 s 300 s Tmb 25C 150C 25C 150C Nominal load current Resistances RON RON On-state resistance On-state resistance 95 28 36 150 38 70 48 88 190 m m m m RG Internal ground resistance IG = 10 mA 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. May 2001 3 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y INPUT CHARACTERISTICS BUK215-50Y 9 V VBG 16 V. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL II VIG VIG(ON) VIG(OFF) VIG II(ON) II(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage Input turn-on hysteresis Input turn-on current Input turn-off current VIG = 3 V VIG = 1.5 V CONDITIONS VIG = 5 V II = 200 A MIN. 20 5.5 1.5 10 TYP. 90 7 2.4 2.1 0.3 MAX. 160 8.5 3 100 UNIT A V V V V A A STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL VSG VSG PARAMETER Status clamping voltage Status low voltage CONDITIONS IS = 100 A IS = 100 A Tmb = 25C IS IS Status leakage current Status saturation current1 Application information RS External pull-up resistor 47 k VSG = 5 V Tmb = 25C VSG = 5 V MIN. 5.5 2 TYP. 7 0.7 0.1 7 MAX. 8.5 1 0.8 15 1 12 UNIT V V V A A mA OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40C Tmb 150C and typical is at Tmb = 25 C. SYMBOL PARAMETER Open circuit detection IL(TO) IL(TO) Low current detect threshold Tj = 25C Hysteresis CONDITIONS 9 V VBG 35 V 0.24 0.4 0.8 0.16 1.6 1.2 A A A MIN. TYP. MAX. UNIT 1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. May 2001 4 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40C Tmb 150C and typicals at Tmb = 25 C. Refer to TRUTH TABLE. SYMBOL PARAMETER Undervoltage VBG(UV) VBG(UV) Low supply threshold voltage1 Hysteresis Overvoltage VBG(OV) VBG(OV) High supply threshold voltage2 Hysteresis 40 45 1 2 CONDITIONS MIN. BUK215-50Y TYP. MAX. UNIT 4.2 0.5 5.5 - V V 50 - V V TRUTH TABLE ABNORMAL CONDITIONS DETECTED INPUT L H H H H H H SUPPLY UV X 0 0 1 0 0 0 OV X 0 0 0 1 0 0 LC X 0 1 X X 0 0 LOAD SC X 0 0 X 0 1 0 OT X 0 0 X 0 X 1 OFF ON ON OFF OFF OFF OFF H H L H H L L off on & normal on & low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown3 LOAD OUTPUT STATUS DESCRIPTION KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don't care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature 1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD PROTECTION CHARACTERISTICS. May 2001 5 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y OVERLOAD PROTECTION CHARACTERISTICS BUK215-50Y 5.5 V VBG 35 V, limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL IL(lim) PARAMETER Overload protection Load current limiting Short circuit load protection Battery load threshold voltage1 Response time2 Overtemperature protection Tj(TO) Tj(TO) Threshold junction temperature3 Hysteresis 150 170 190 C VBL > VBL(TO) CONDITIONS VBL = VBG VBG 9 V VBG = 16 V VBG = 35 V td sc MIN. 34 TYP. 45 MAX. 64 UNIT A VBL(TO) 8 15 - 10 20 180 12 25 250 V V s - 10 - C SWITCHING CHARACTERISTICS Tmb = 25 C, VBG = 13 V, for resistive load RL = 13 . SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS from input going high to 10% VL 30% to 70% VL to 90% VL from input going low to 90% VL 70% to 30% VL to 10% VL 40 0.35 140 60 1 200 s V/s s s V/s s MIN. TYP. MAX. UNIT td off dV/dtoff t off - 55 0.6 85 80 1 120 CAPACITANCES Tmb = 25 C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL Cig Cbl Csg PARAMETER Input capacitance Output capacitance Status capacitance CONDITIONS VBG = 13 V VBL = 13 V VSG = 5 V MIN. TYP. 15 250 11 MAX. 20 350 15 UNIT pF pF pF 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation. May 2001 6 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y 5 VBL IB II I VBG VSG RS IG IS S VIG B TOPFET HSS G IL L VLG IBG(ON) / mA BUK215-50Y CLAMPING OVERVOLTAGE SHUTDOWN 4 3 2 1 UNDERVOLTAGE SHUTDOWN OPERATING V IG = 5 V LOAD QUIESCENT VIG = 0 V 0 0 10 20 30 40 VBG / V 50 60 70 Fig.4. High side switch measurements schematic. (current and voltage conventions) Fig.7. Typical supply characteristics, 25 C. IG = f(VBG); parameter VIG 80 RON / mOhm BUK215-50Y 40 38 RON / mOhm BUK215-50Y typ . 60 36 34 RON max VBG = 6 V 40 32 30 9 V =< VBG =< 35 V 20 28 26 24 22 0 -50 0 50 20 Tj / C O 100 150 200 1 10 100 VBG / V Fig.5. Typical on-state resistance, tp = 300 s. RON = f(Tj); parameter VBG; condition IL = 10 A Fig.8. Typical on-state resistance,Tj = 25 C. RON = f(VBG); condition IL = 10 A; tp = 300 s 50 IL / A VBG / V BUK215-50Y 3.0 IG / mA lL = 0 A BUK215-50Y >=8 7 6 5 2.5 2.0 1.5 40 30 lL > IL(TO) l >I L 9 V <= VBG <= 35 V typ. L(TO) 20 1.0 10 0.5 0 0 VBG = 50 V 0 VBL / V 1 2 -50 0 50 Tj / C O 100 150 200 Fig.6. Typical on-state characteristics, Tj = 25 C. IL = f(Tj); parameter VBG; tp = 250 s Fig.9. Typical operating supply current. IG = f(Tj); parameters IL, VBG; condition VIG = 5 V May 2001 7 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y 100E-6 10E-6 1E-6 100E-9 10E-9 IB / A BUK215-50Y 1.6 IL(OC) / A BUK215-50Y max. typ. 1.2 0.8 max. typ. 0.4 1E-9 100E-12 -50 0 50 0.0 min. Tj / C O 100 150 200 -50 0 50 Tj / C O 100 150 200 Fig.10. Typical supply quiescent current. IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V Fig.13. Low load current detection threshold. IL(OC) = f(Tj); conditions VIG = 5 V; VBG 9 V 100E-6 10E-6 1E-6 100E-9 10E-9 IL / A BUK215-50Y max. typ. 5.5 VBG(UV) / V BUK215-50Y 4.5 typ. 3.5 1E-9 00E-12 10E-12 -50 0 50 on off 2.5 Tj / C O 100 150 200 -50 0 50 Tj / C O 100 150 200 Fig.11. Typical off-state leakage current. IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V. Fig.14. Supply undervoltage thresholds. VBG(UV) = f(Tj); conditions VIG = 5 V; VBL 2 V 100E-6 IS / A BUK215-50Y max. 55 VBG(OV) / V BUK215-50Y 10E-6 50 max. on 1E-6 typ. 45 100E-9 off 40 min. 10E-9 1E-9 -50 0 50 35 Tj / C O 100 150 200 -50 0 50 Tj / C O 100 150 200 Fig.12. Status leakage current. IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V Fig.15. Supply overvoltage thresholds. VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA May 2001 8 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y 1 VSG(LOW) / V BUK215-50Y 8 IS / mA BUK215-50Y 6 0.5 4 2 0 0 -50 0 50 Tj / C O 100 150 200 0 1 2 3 4 5 VSG / V Fig.16. Typical status low characteristic. VSG = f(Tj); conditions VBG 9 V, IS = 100 A Fig.19. Typical status low characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A 3.00 VIG / V BUK215-50Y 7.50 7.40 7.30 VSG / V VIG / V = BUK215-50Y 5 2.50 7.20 7.10 2.00 VIG(ON) VIG(OFF) 7.00 6.90 6.80 6.70 6.60 0 1.50 1.00 -50 0 50 6.50 Tj / C O 100 150 200 -50 0 50 O Tj / C 100 150 200 Fig.17. Typical threshold voltage characteristic. VIG = f(Tj); condition 9V VBG 16V Fig.20. Typical status clamping voltage. VSG = f(Tj); condition IS = 100A, VBG = 13V 7.50 7.40 7.30 7.20 7.10 7.00 6.90 6.80 6.70 6.60 6.50 VIG / V BUK215-50Y 20 IS / mA BUK215-50Y 15 10 5 0 -50 0 50 Tj / C O 100 150 200 0 2 4 6 8 10 VSG / V Fig.18. Typical input clamping voltage. VIG = f(Tj); condition II = 200A, VBG = 13V Fig.21. Typical status characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = VBG = 0V May 2001 9 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y 65 VBG / V IG = BUK215-50Y 200 mA -10 VLG / V BUK215-50Y -15 60 1 mA IL = -20 55 10 mA 10 A -25 50 -50 0 50 -30 Tj / C O 100 150 200 -50 0 50 Tj / C O 100 150 200 Fig.22. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG Fig.25. Typical negative load clamping voltage. VLG = f(Tj); parameter IL; condition VIG = = 0V 65 VBL / V BUK215-50Y 0 -5 -10 IL / A BUK215-50Y 60 IL = 600 mA 1 mA -15 -20 -25 -30 -35 -40 -45 55 50 -50 0 50 Tj / C O 100 150 200 -50 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 VBL / V Fig.23. Typical battery to load clamping voltage. VBL = f(Tj); parameter IL; condition IG = 10mA Fig.26. Typical reverse diode characteristic. IL = f(VBL); conditions VIG = 0 V, Tj = 25 C 10 IL / A BUK215-50Y 50 45 40 35 30 IL / A current limiting BUK215-50Y VBL(TO) typ. Short circuit trip = 150us 5 25 20 15 10 5 0 -30 -25 -20 -15 -10 0 VLG / V 0 2 4 6 8 VBL / V 10 12 14 16 18 20 Fig.24. Typical negative load clamping. IL = f(VLG); conditions VIG = = 0V, Tj = 25C Fig.27. Typical overload characteristic, Tmb = 25 C. IL = f(VBL); condition VBG = 16 V; parameter tp May 2001 10 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y 35 30 25 20 VBL(TO) / V BUK215-50Y max. IL(lim) / A 50 BUK215-50Y typ. 25C min. 45 15 10 40 35 5 0 0 10 20 30 -50 0 50 O Tj / C 100 VBG / V 30 40 50 150 200 Fig.28. Short circuit load threshold voltage. VBL(TO) = f(VBG); conditions -40C Tmb 150C Fig.31. Typical overload current, VBL = 8V. IL = f(Tj); parameter VBG = 13V;tp = 300 s 10 nF CBL BUK215-50Y 12.0 11.8 11.6 11.4 11.2 VBL(TO) / V BUK215-50Y 1nF 11.0 10.8 10.6 10.4 10.2 10.0 0 10 20 100pF VBL / V 30 40 50 -50 0 50 Tj / C O 100 150 200 Fig.29. Typical output capacitance. Tmb = 25 C Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V Fig.32. Typical short circuit load threshold voltage. VBL(TO) = f(Tj); condition VBG = 16 V Zth j-mb ( K / W ) BUK215-50Y 0 IG / mA BUK215-50Y 1e+01 D= -50 1e+00 0.5 0.2 0.1 0.05 0.02 -100 1e-01 -150 1e-02 0 P D tp D= tp T t -200 -20 -15 -10 -5 0 1e-03 1e-07 T 1e-05 1e-03 1e-01 VBG / V t/s 1e+02 Fig.30. Typical reverse battery characteristic. IG = f(VBG); conditions IL = 0 A, Tj = 25 C Fig.33. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T May 2001 11 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) BUK215-50Y SOT426 A E A1 D1 mounting base D HD 3 1 Lp 2 4 5 b c Q e e e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT426 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Fig.34. SOT426 surface mounting package1, centre pin connected to mounting base. 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. May 2001 12 Rev 1.010 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK210-50Y BUK215-50Y DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 13 Rev 1.010 |
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